Thermally induced defects in n-type and p-type silicon
- 16 December 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 20 (2), 601-610
- https://doi.org/10.1002/pssa.2210200222
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Impurity conduction in quenched p-type siliconPhysica Status Solidi (a), 1970
- Defects in Quenched SiliconPhysica Status Solidi (b), 1969
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967
- Experimental Determination of Diffusion and Formation Energies of Thermal Vacancies in GermaniumJournal of the Physics Society Japan, 1966
- Quenched-In Defects in p-Type SiliconJournal of Applied Physics, 1964
- Temperature dependence of hall mobility and μH/μD for SiJournal of Physics and Chemistry of Solids, 1963
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957