Localized epitaxial growth of CrSi2 on silicon
- 15 April 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (8), 2784-2787
- https://doi.org/10.1063/1.336990
Abstract
Epitaxial CrSi2 grown on (001) and (011) Si were investigated by transmission electron microscopy. In comparison with the CrSi2 epitaxy previously obtained in (111) Si, the quality of the epitaxial CrSi2 layers, in terms of the size, extent of the silicon surface coverage, and the regularity of interfacial dislocations of the epitaxial regions, were found to be the best in (111) Si and the poorest in (011) Si. The role of the lattice match in the epitaxial growth of CrSi2 on silicon is explored. Crystallographic analysis was carried out to examine possible matches between atoms in the corresponding CrSi2 planes and (111), (001), and (011) Si planes, respectively, at CrSi2/Si interfaces. The quality of CrSi2 epitaxy was found to correlate directly with the lattice match at the interfaces.Keywords
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