Effect of growth temperature on the photoluminescent spectra of undoped AlGaAs grown by metalorganic-chemical vapor deposition
- 31 July 1983
- journal article
- Published by Elsevier in Materials Letters
- Vol. 2 (1), 35-38
- https://doi.org/10.1016/0167-577x(83)90027-7
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxyJournal of Applied Physics, 1982
- The effect of substrate growth temperature on deep levels in n-AlxGa1−xAs grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Luminescence of AlxGa1−xAs grown by MOVPEJournal of Crystal Growth, 1981
- Effect of growth temperature on the photoluminescent spectra from Sn-doped Ga1−xAlxAs grown by molecular beam epitaxyApplied Physics Letters, 1981
- Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAsJournal of Applied Physics, 1980
- C.W. operation of AlxGa1−xAs/AlyGa1−yAs lasers grown by metalorganic c.v.d. in wavelength range 760~780 nmElectronics Letters, 1980
- Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold currentElectronics Letters, 1979
- Continuous room-temperature operation of Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977
- Photocapacitance Studies on Deep Levels in GaAs and AlxGa1-xAs Liquid Phase Epitaxial LayersJapanese Journal of Applied Physics, 1976