Nucleation mechanisms of diamond in plasma chemical vapor deposition
- 1 March 1993
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 2 (2-4), 328-332
- https://doi.org/10.1016/0925-9635(93)90076-e
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- A new method for the generation of diamond nuclei by plasma CVDDiamond and Related Materials, 1992
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Modeling of the sp3/sp2 ratio in ion beam and plasma-deposited carbon filmsApplied Physics Letters, 1991
- Generation of diamond nuclei by electric field in plasma chemical vapor depositionApplied Physics Letters, 1991
- Electron microscopic characterization of diamond films grown on Si by bias-controlled chemical vapor depositionJournal of Materials Research, 1990
- Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobeApplied Physics Letters, 1990
- Effects of electric field on the growth of diamond by microwave plasma CVDVacuum, 1990
- Subplantation model for film growth from hyperthermal species: Application to diamondPhysical Review Letters, 1989
- On epitaxial growth of diamond films on (100) silicon substratesApplied Physics Letters, 1988
- The Displacement of Atoms in Solids by RadiationReports on Progress in Physics, 1955