Plasma enhanced chemical vapour deposition of boron nitride onto InP
- 1 April 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 241 (1-2), 278-281
- https://doi.org/10.1016/0040-6090(94)90441-3
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor DepositionJapanese Journal of Applied Physics, 1992
- Phase control of cubic boron nitride thin filmsJournal of Applied Physics, 1992
- Growth and characterization of epitaxial cubic boron nitride films on siliconPhysical Review B, 1991
- Boron Nitride Thin Insulating Films on GaAs Compound SemiconductorsMaterials Science Forum, 1991
- Synthetic routes to boron nitrideChemical Reviews, 1990
- Preparation, properties and applications of boron nitride thin filmsThin Solid Films, 1988
- Study of boron nitride gate insulators onto InP grown by low-temperature chemical vapor depositionJournal of Applied Physics, 1984
- Amorphous BN films produced in a double-plasma reactor for semiconductor applicationsSolid-State Electronics, 1983
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983