Study of boron nitride gate insulators onto InP grown by low-temperature chemical vapor deposition

Abstract

Thin films of phosphorus‐doped boron nitride have been grown onto InP, as a new gate insulator, by low‐temperature chemical vapor deposition using the reaction of NH₃, B₂H₆, and PH₃. Characteristics of the pyrolytic boron nitride obtained have been investigated by ellipsometry, x‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and conductivity measurement. The results of XPS and AES have shown that a stable and comparatively stoichiometric boron nitride film was successfully obtained, even at low temperatures (300–600 °C), by using the two‐temperature zone technique. The density of interface states for the BN/InP system has been found to be about 10¹⁰ cm⁻² eV⁻¹ or less around the midgap.