Epitaxial Nickel Disilicide Formation by Electron Beam Annealing
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Liquid phase growth of epitaxial Ni and Co silicidesApplied Physics Letters, 1983
- The effects of PtxSi growth on the redistribution of p-type dopants in siliconThin Solid Films, 1983
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Formation and structure of epitaxial NiSi2 and CoSi2Thin Solid Films, 1982
- Single Crystalline Silicide FormationJapanese Journal of Applied Physics, 1981
- Interface and surface structure of epitaxial NiSi2 filmsApplied Physics Letters, 1981
- Epitaxial growth of the nickel disilicide phaseThin Solid Films, 1980
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- The redistribution of implanted dopants after metal-silicide formationJournal of Applied Physics, 1978