Computer simulations of liquid phase epitaxy of GaAs in Ga solution
- 1 November 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 11 (2), 157-165
- https://doi.org/10.1016/0022-0248(71)90180-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- Phenomenological Theory on Liquid Phase EpitaxyJapanese Journal of Applied Physics, 1970
- The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growthJournal of Crystal Growth, 1969
- On the growth rate of crystals from solutionJournal of Crystal Growth, 1968
- PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTIONApplied Physics Letters, 1967
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963