Phenomenological Theory on Liquid Phase Epitaxy

Abstract

Epitaxial growth of semiconductor crystal from metal-semiconductor solution, particularly the growth of GaAs from Sn-GaAs solution, was analysed on the basis of some simplified assumptions. Formulae were derived for the depth of initial etch back and for the thickness of the grown layer. It was assumed that the dissolution rate of the substrate was determined by the degree of unsaturation of the solution, and that the epitaxial growth took place in solution equilibrium. Comparisons were made between theoretical and experimental values. Fairly good agreement was found for both the depth of the initial etch back and the thickness of the grown layer.