The Energy Levels of Zn and Se in (AlxGa1-x)0.52In0.48P
- 1 March 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (3A), L187
- https://doi.org/10.1143/jjap.24.l187
Abstract
The energy levels of Zn and Se impurities in (Al x Ga1-x )0.52In0.48P were investigated by temperature dependent Hall measurement. The activation energy of Zn acceptor increases monotonically with increasing AlInP mole fraction x, from 25 meV at x=0 to 97 meV at x=0.75. The activation energy of Se donor begins to increase at x=0.2–0.3, and it reaches a maximum value of about 95 meV around x=0.4. As x increases from 0.5 to 1, the energy level tends to decrease to 72 meV. This compositional dependence of the energy levels in p-type and n-type materials is similar to those in AlGaAs.Keywords
This publication has 10 references indexed in Scilit:
- Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor depositionApplied Physics Letters, 1984
- High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition –Impurity Doping and 590 nm (Orange) Electroluminescence–Japanese Journal of Applied Physics, 1984
- Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperaturesJournal of Applied Physics, 1983
- Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Te and Ge — doping studies in Ga1−xAlxAsJournal of Electronic Materials, 1975
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- Conduction Bands in In1−xAlxPJournal of Applied Physics, 1970
- The fundamental absorption edge of AlAs and AlPSolid State Communications, 1970
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968
- Band Gap of Gallium Phosphide from 0 to 900°K and Light Emission from Diodes at High TemperaturesPhysical Review B, 1968