High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition –Impurity Doping and 590 nm (Orange) Electroluminescence–
- 1 September 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (9A), L746
- https://doi.org/10.1143/jjap.23.l746
Abstract
Improvement in doping characteristics and luminescence efficiency for MOCVD grown (Al x Ga1-x )0.5In0.5P was obtained by introducing a simple air-lock system. A few hundredths Ωcm resistivity was obtained for the entire aluminum composition n-type (Al x Ga1-x )0.5In0.5P and less than a few tenths Ωcm resistivity was obtained for p-type (Al x Ga1-x )0.5In0.5P with x\lesssim0.6. 590 nm orange electroluminescence from double heterostructure diodes and 555 nm green photoluminescence, the shortest wavelengths ever-reported for (Al x Ga1-x )0.5In0.5P system, were observed.Keywords
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