Time-dependent heat flow calculation of cw laser-induced melting of silicon
- 15 May 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (10), 4738-4741
- https://doi.org/10.1063/1.335337
Abstract
The time evolution of the temperature profile during cw laser processing is calculated including the effects of melting using computer simulation. Results, presented for single‐crystal silicon irradiated by an argon ion cw laser, show that high scanning speed can result in a non‐steady‐state situation for the temperature rise. In this case the maximum temperature and melt depth become functions of the dwell time and also less sensitive to the incident laser power, as a result of which scanning speed can be effectively used to control melting process induced by cw laser. Experimental results presented support the calculated dependence of the maximum melt depth on the laser power and scanning speed.Keywords
This publication has 13 references indexed in Scilit:
- Excimer laser annealing of ion-implanted siliconJournal of Applied Physics, 1984
- Influence of scan speed on deep level defects in cw laser annealed siliconApplied Physics Letters, 1983
- Temperature profiles induced by a scanning cw laser beamJournal of Applied Physics, 1982
- Silicon solar cells realized by laser induced diffusion of vacuum-deposited dopantsJournal of Applied Physics, 1981
- Schottky barrier formation by laser irradiation processingApplied Physics Letters, 1980
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- Temperature rise induced by a laser beam II. The nonlinear caseApplied Physics Letters, 1978
- p-n junction formation in boron-deposited silicon by laser-induced diffusionApplied Physics Letters, 1978
- Temperature rise induced by a laser beamJournal of Applied Physics, 1977
- Surface rippling induced by surface-tension gradients during laser surface melting and alloyingJournal of Applied Physics, 1977