Influence of scan speed on deep level defects in cw laser annealed silicon
- 1 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1), 98-100
- https://doi.org/10.1063/1.94136
Abstract
Deep level transient spectroscopy has been used to study the influence of the beam scan speed on quenched-in defects in cw laser processed virgin silicon. It is shown that the averaged defect concentration decreases by almost two orders of magnitude as the scan speed is increased from 1 to 100 cm/s for a fixed temperature distribution in the material. Implications regarding technological applications of cw laser processing are briefly discussed.Keywords
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