Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide
- 1 June 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (7), 2893-2896
- https://doi.org/10.1063/1.1710019
Abstract
A study has been made of hillock‐like features which sometimes occur on {1, 0, 0} surfaces of epitaxial gallium arsenide. X‐ray diffraction topography reveals that the hillocks contain cores of twin which originate at, or near, the epitaxial interface. During growth of the layer the twins can become buried, leaving a surface which is matrix‐oriented.Keywords
This publication has 11 references indexed in Scilit:
- Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on GermaniumJournal of Applied Physics, 1966
- Oriented growth of semiconductors—II homoepitaxy of gallium arsenideJournal of Physics and Chemistry of Solids, 1966
- Growth “pyramids” in epitaxial GaAsSolid State Communications, 1966
- Growth and Dislocation Structure of Single-Crystal Ga (As1−xPx)Journal of Applied Physics, 1965
- Vapor Phase Transport and Epitaxial Growth of GaAs[sub 1?x]P[sub x] Using Water VaporJournal of the Electrochemical Society, 1965
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- Influence of Vapor Composition on the Growth Rate and Morphology of Gallium Arsenide Epitaxial FilmsJournal of the Electrochemical Society, 1964
- Vapor Growth of GaAs in the Polar DirectionJapanese Journal of Applied Physics, 1963
- Chemical Transport and Epitaxial Deposition of Gallium ArsenideJournal of the Electrochemical Society, 1963
- Vapor Growth of Gallium ArsenideJournal of the Electrochemical Society, 1961