Redistribution of boron in silicon after high−temperature proton irradiation
- 1 February 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (3), 77-80
- https://doi.org/10.1063/1.88077
Abstract
We have measured the distribution of boron in silicon, using secondary ion mass spectroscopy or nuclear reactions, after irradiation at 850°C by protons of energy 250−450 keV. The fluence was 1×1017 to 6×1017 protons/cm2. Prediffused and uniformly doped samples have been studied. It is found that the boron distribution is considerably modified: the boron concentration shows a peak near the end of the proton range, where the defect creation rate is highest. This anomaly cannot be explained by using solely simple diffusion theory, and depends on boron−defect interactions, such as the formation of precipitates or complexes. As a consequence, the interpretations of radiation−enhanced diffusion experiments must be discussed again.Keywords
This publication has 11 references indexed in Scilit:
- The dynamic observation of the formation of defects in silicon under electron and proton irradiationPhilosophical Magazine, 1973
- Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in SiliconJapanese Journal of Applied Physics, 1973
- Remarks on the Vacancy Mechanisms in Ion ImplantationJapanese Journal of Applied Physics, 1973
- Shallow donor formation in Si produced by proton bombardmentPhysica Status Solidi (a), 1973
- Nuclear reaction analysis of boron and oxygen in siliconJournal of Radioanalytical and Nuclear Chemistry, 1972
- Enhanced diffusion in Si and Ge by light ion implantationJournal of Applied Physics, 1972
- Vacancy flow effect on electromigration in silverJournal of Physics and Chemistry of Solids, 1971
- Ratio of Vacancy Jump Frequencies around and away from Copper Impurity Atoms in AluminumPhysical Review B, 1970
- Effets de l'irradiation par des protons sur les propriétés du siliciumJournal de Physique et le Radium, 1963
- Non-metallic solids. Vacancy enhanced diffusion in silicon. Effects of irradiation and of chemical impuritiesDiscussions of the Faraday Society, 1961