Anomalous voltage overshoot during turn-off of thin-film n-channel SOI MOSFETs
- 1 April 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (4), 164-166
- https://doi.org/10.1109/55.215163
Abstract
An anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator SOI n-MOSFETs is reported. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over a subnanosecond time scale, the charge dynamics related to the bipolar action are essential to explain this voltage overshoot.Keywords
This publication has 7 references indexed in Scilit:
- Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET'sIEEE Transactions on Electron Devices, 1991
- Silicon-on-Insulator TechnologyPublished by Springer Nature ,1991
- Compact Transistor Modelling for Circuit DesignPublished by Springer Nature ,1990
- A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CADIEEE Transactions on Electron Devices, 1988
- A charge-based large-signal model for thin-film SOI MOSFET'sIEEE Transactions on Electron Devices, 1985
- An accurate large-signal MOS transistor model for use in computer-aided designIEEE Transactions on Electron Devices, 1972