Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (6), 1384-1391
- https://doi.org/10.1109/16.81630
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Source-drain breakdown in thin SOI transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- SOI design for submicron CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Single-transistor latch in SOI MOSFETsIEEE Electron Device Letters, 1988
- A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CADIEEE Transactions on Electron Devices, 1988
- Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFETsIEEE Transactions on Electron Devices, 1988
- Reduction of kink effect in thin-film SOI MOSFETsIEEE Electron Device Letters, 1988
- Anomalous subthreshold current—Voltage characteristics of n-channel SOI MOSFET'sIEEE Electron Device Letters, 1987
- Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modelingIEEE Transactions on Electron Devices, 1985
- A charge-based large-signal model for thin-film SOI MOSFET'sIEEE Transactions on Electron Devices, 1985
- An analytic model for minority-carrier transport in heavily doped regions of silicon devicesIEEE Transactions on Electron Devices, 1981