A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (11), 1866-1875
- https://doi.org/10.1109/16.7399
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- SPICE Simulation of SOI MOSFET Integrated CircuitsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1986
- Significance of the channel—Charge partition in the transient MOSFET modelIEEE Transactions on Electron Devices, 1986
- Modeling of 0.1-µm MOSFET on SOI structure using Monte Carlo simulation techniqueIEEE Transactions on Electron Devices, 1986
- VB-5 floating substrate effects on the switching characteristics of SOI MOSFETIEEE Transactions on Electron Devices, 1985
- Threshold voltage in short-channel MOS devicesIEEE Transactions on Electron Devices, 1985
- The effect of high fields on MOS device and circuit performanceIEEE Transactions on Electron Devices, 1984
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980
- High-accuracy MOS models for computer-aided designIEEE Transactions on Electron Devices, 1980
- A charge-oriented model for MOS transistor capacitancesIEEE Journal of Solid-State Circuits, 1978
- Conductance of MOS transistors in saturationIEEE Transactions on Electron Devices, 1969