Properties of p+-n+ AlGaAs diodes
- 1 July 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (7), 3935-3937
- https://doi.org/10.1063/1.328169
Abstract
AlxGa1−xAs p+‐n+ diodes have been studied in the direct band‐gap range. Tunnel diodes were achieved in alloys with band gaps up to about 1.85 eV. For these devices the I‐V characteristics show a second hump, which is believed to be due to tunneling from the conduction band on the n side of the junction to an impurity band on the p side of the junction. The location of this band was found to be independent of the band gap. In alloys with band gaps in the range 1.85–1.95 eV, backward diodes were obtained.Keywords
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