Ordering of oxide precipitates in oxygen implanted silicon
- 27 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17), 1062-1064
- https://doi.org/10.1063/1.97475
Abstract
An order network of oxide precipitates has been found in the monocrystalline superficial silicon layer of a silicon-on-insulator structure obtained by high-dose oxygen implantation. The network consists of oxide precipitates 2 nm in size spaced about 5 nm apart. Electron diffraction patterns indicate that ordering occurs both parallel and perpendicular to the surface along the 〈100〉 directions of the silicon lattice. The precipitate network has a cubic symmetry.Keywords
This publication has 5 references indexed in Scilit:
- Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into SiApplied Physics Letters, 1984
- Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantationApplied Physics Letters, 1984
- An AES Investigation into the Phase Distribution of Ion‐Implanted Oxygen in Silicon N‐Channel DevicesJournal of the Electrochemical Society, 1984
- The effects of impurity diffusion and surface damage on oxygen precipitation in siliconJournal of Applied Physics, 1983
- Invited review article ordering of voids and gas bubbles in radiation environmentsRadiation Effects, 1982