The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates
- 1 July 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (7A), L544
- https://doi.org/10.1143/jjap.25.l544
Abstract
The effect of lattice misfit on photoluminescence properties and lattice parameters of ZnSe thin films grown by atomic layer epitaxy on (100)GaAs substrates has been investigated. It is observed that ZnSe layers thinner than 0.17 µn suffer complete tetragonal distortion, while films thickner than 0.17 µm show relief from the misfit strain. The residual stress in the epilayers amounts to 1.84×109 dyn/cm2 assuming complete tetragonal distortion. The thin films exhibit both free exciton emission and deep emission, while the thick films exhibit dominant bound exciton emission at donors and weakdeep emission.Keywords
This publication has 10 references indexed in Scilit:
- Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxyApplied Physics Letters, 1986
- Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAsApplied Physics Letters, 1986
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPEJournal of Crystal Growth, 1985
- Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour depositionJournal of Crystal Growth, 1985
- Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxyApplied Physics Letters, 1984
- Direct optically detected magnetic resonance observation of a copper centre associated with the green emission in ZnSeJournal of Physics C: Solid State Physics, 1981
- Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1981
- Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layersIEEE Journal of Quantum Electronics, 1981
- The formation of imperfections in epitaxial gold filmsPhilosophical Magazine, 1966