Growth of GaAs1−x Sbx by organometallic vapor phase epitaxy
- 1 November 1983
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (6), 959-972
- https://doi.org/10.1007/bf02654967
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimonyJournal of Electronic Materials, 1982
- Vapor growth of InGaAs and InP on (100), (110), (111), (311) and (511) InP substratesJournal of Crystal Growth, 1982
- The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenicJournal of Electronic Materials, 1980
- Organometallic VPE Growth of InAs1-xSbxon InAsJapanese Journal of Applied Physics, 1980
- Miscibility gap in the GaAsy Sb1−y systemJournal of Electronic Materials, 1979
- Molecular Beam Epitaxy of GaSb and GaSbxAs1-xJapanese Journal of Applied Physics, 1978
- Threshold characteristics and extended wavelength operation of GaAs1−x′Sbx′/ AlyGa1−yAs1−xSbx double-heterostructure lasersJournal of Applied Physics, 1977
- Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbx double heterostructure LED’s in the 1-μm wavelength regionApplied Physics Letters, 1975
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968