Ultrasmall device fabrication using dry etching of gaas
- 31 December 1986
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 5 (1-4), 249-256
- https://doi.org/10.1016/0167-9317(86)90051-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Low-temperature annealed contacts to very thin GaAs epilayersApplied Physics Letters, 1986
- Aperiodic magnetoresistance oscillations in narrow inversion layers in SiPhysical Review Letters, 1985
- Fabrication of 20-nm structures in GaAsApplied Physics Letters, 1984
- Ion-beam-induced atomic mixing at the SiO2/Si interfaceNuclear Instruments and Methods, 1981
- Surface and interface depletion corrections to free carrier-density determinations by hall measurementsSolid-State Electronics, 1979