Photon effect on radiative properties of silicon during rapid thermal processing
- 15 July 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (2), 830-835
- https://doi.org/10.1063/1.365780
Abstract
Emissivity is a critical parameter in the rapid thermal processing(RTP) of semiconductors for temperature control and thermal modeling. It is often considered as a material property that depends on the sample temperature and surface finishing. For a silicon wafer placed in a radiation environment such as a RTP chamber, however, the ambient photons emitted from lamps create electron-hole pairs in the wafer. These electrons and holes participate in the thermal emission from the wafer and change its radiative properties. This work studies this photon effect on the radiative properties of silicon and demonstrates, through modeling and experiment, that radiative properties of a silicon wafer may depend on the temperature of the lamps due to free-carrier excitation. Such an photon effect imposes a limit on the accuracy of temperature measurement by the infrared pyrometry method in a RTP environment. It is also an important factor to consider in the measurement of the temperature dependence of silicon’s optical properties and in the thermal modeling of the RTP.Keywords
This publication has 12 references indexed in Scilit:
- Optical effect on thermal emission of semiconductorsApplied Physics Letters, 1996
- Emissivity of silicon at elevated temperaturesJournal of Applied Physics, 1993
- Highly resolved separation of carrier- and thermal-wave contributions to photothermal signals from Cr-doped silicon using rate-window infrared radiometryJournal of Applied Physics, 1993
- Influence of temperature and backside roughness on the emissivity of Si wafers during rapid thermal processingJournal of Applied Physics, 1992
- Observation of silicon wafer emissivity in rapid thermal processing chambers for pyrometric temperature monitoringApplied Physics Letters, 1990
- Emissivity Issues In Pyrometric Temperature Monitoring For RTP SystemsPublished by SPIE-Intl Soc Optical Eng ,1990
- Time-resolved infrared radiometry of laser-heated siliconIEEE Journal of Quantum Electronics, 1989
- Semiconductor assessment using photothermal radiometryInfrared Physics, 1988
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975
- Spectral Emissivity of SiliconJapanese Journal of Applied Physics, 1967