p-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors
- 1 August 1995
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (3), 2126-2128
- https://doi.org/10.1063/1.360194
Abstract
Lattice‐matched p‐doped GaAs–Ga0.51In0.49P quantum well intersub‐band photodetectors with three different well widths have been grown on GaAs substrates by metal‐organic chemical‐vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 Å. Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig–Penney calculations.Keywords
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