GaAs/GaInP multiquantum well long-wavelength infrared detector using bound-to-continuum state absorption
- 22 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (17), 1802-1804
- https://doi.org/10.1063/1.104027
Abstract
We demonstrate an 8 μm superlattice infrared detector which utilizes bound-to-continuum state intersubband absorption in lattice-matched GaAs/Ga0.5In0.5P multiquantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy. The band offsets of the GaAs/Ga0.5In0.5P heterosystem are obtained by comparing the theoretical absorption spectrum and the measured responsivity spectrum. The values determined for ΔEc and ΔEv are 221 and 262 meV, respectively.Keywords
This publication has 20 references indexed in Scilit:
- 10 μm infrared hot-electron transistorsApplied Physics Letters, 1990
- Long-wavelength infrared detection in a Kastalsky-type superlattice structureApplied Physics Letters, 1990
- High-detectivity GaAs quantum well infrared detectors with peak responsivity at 8.2 μmJournal of Applied Physics, 1990
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- Mid-infrared detectors in the 3–5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structuresApplied Physics Letters, 1990
- Extremely high electron mobility in a GaAs-GaxIn1−xP heterostructure grown by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetectorApplied Physics Letters, 1989
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVDJapanese Journal of Applied Physics, 1986
- Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerfaceApplied Physics Letters, 1986