A plane-wave pseudopotential study on III V zinc-blende and wurtzite semiconductors under pressure
- 3 October 2002
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 14 (41), 9579-9587
- https://doi.org/10.1088/0953-8984/14/41/313
Abstract
The results of a plane-wave pseudopotential study on the mechanical and electronic properties of twelve III–V zinc-blende (ZB) and wurtzite (WZ) semiconductors under pressure are presented. The lattice parameters, bulk moduli B0, energy band types, band-gaps EgΓ at the Γ point, and pressure dependences of EgΓ are investigated in detail. Our results show that the EgΓ – P relations can be classified into two distinct types for these ZB and WZ phases. A transformation from one type of EgΓ – P relation to the other type is found to occur in some WZ phases. Linear relationships between the bulk moduli and the inverse of unit-cell volumes at P = 0 are also found for the ZB and WZ phases.Keywords
This publication has 36 references indexed in Scilit:
- Computational analysis of the high-pressure structures of InSbJournal of Physics: Condensed Matter, 2000
- Optical and structural properties of III-V nitrides under pressurePhysical Review B, 1994
- Electronic structure of GaN with strain and phonon distortionsPhysical Review B, 1994
- InP under high pressuresJournal of Materials Research, 1992
- Pressure dependence of the electronic properties of cubic III-V In compoundsPhysical Review B, 1990
- High-pressure study of photoluminescence in indium phosphide at low temperaturePhysical Review B, 1986
- High-pressure phase transitions and equation of state of the III-V compound InAs up to 27 GPaPhysical Review B, 1985
- Pressure dependence of the direct absorption edge of InPPhysical Review B, 1980
- The conduction band structures of GaAs and InPJournal of Physics C: Solid State Physics, 1973
- Effect of Pressure on Interband Reflectivity Spectra of Germanium and Related SemiconductorsPhysical Review B, 1967