Secondary-ion mass spectrometry on δ-doped GaAs grown by molecular beam epitaxy
- 22 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (17), 1799-1801
- https://doi.org/10.1063/1.104026
Abstract
Improved resolution of secondary-ion mass spectrometry (SIMS) is obtained on Be δ-doped GaAs grown by molecular beam epitaxy at a temperature of 500 °C. The measured impurity distribution width is 29 Å, which corresponds to a SIMS resolution of ΔzR=25 Å. Impurity diffusion lengths of ≤10 Å can be detected by the technique. The surface segregation of Si impurities in δ-doped GaAs grown at 660 °C is investigated as a function of doping density. The segregation length increases with the Si density and is consistent with a segregation model based on the pinning of the Fermi level at the growing GaAs surface.Keywords
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