Reflection and transmission secondary emission from GaAs
- 1 November 1972
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (11), 4803-4804
- https://doi.org/10.1063/1.1661015
Abstract
Reflection and transmission secondary‐emission ratios have been measured for a 3.5‐μm‐thick self‐supporting GaAs film activated to negative electron affinity. A reflection‐mode gain of 540 at 20 keV primary energy was observed. In transmission, the gain at 20 keV primary energy was 112. Analysis of the data gives the surface‐escape probability as 0.18 and the electron‐diffusion length as 3.0 μm. The data are well described by a simple diffusion‐transport model.Keywords
This publication has 18 references indexed in Scilit:
- Novel GaAs–(AlGa)As Cold-Cathode Structure and Factors Affecting Extended OperationApplied Physics Letters, 1972
- Dependence on Crystalline Face of the Band Bending in Cs2 O-Activated GaAsJournal of Applied Physics, 1971
- LONG-WAVELENGTH PHOTOEMISSION FROM Ga1 − xInxAs ALLOYSApplied Physics Letters, 1971
- COLD-CATHODE ELECTRON EMISSION FROM SILICONApplied Physics Letters, 1971
- REFLECTION AND TRANSMISSION SECONDARY EMISSION FROM SILICONApplied Physics Letters, 1970
- INFRARED PHOTOEMISSION FROM SILICONApplied Physics Letters, 1970
- PHOTOEMISSION FROM InP-Cs-OApplied Physics Letters, 1968
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965
- Hot-Electron Emission From ShallowJunctions is SiliconPhysical Review B, 1963
- Range of 1-10 kev Electrons in SolidsPhysical Review B, 1960