COLD-CATHODE ELECTRON EMISSION FROM SILICON
- 1 April 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (7), 272-273
- https://doi.org/10.1063/1.1653659
Abstract
Cold‐cathode electron emission has been obtained from forward‐biased silicon p‐n junctions whose surfaces were activated to a state of negative electron affinity. Currents as high as 7.3 mA were obtained with current densities in excess of 1 A/cm2. Efficiencies as high as 2% were measured, and currents of tens of microamperes were drawn for several hours.Keywords
This publication has 11 references indexed in Scilit:
- AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTUREApplied Physics Letters, 1970
- Characteristics of a ZnS:Pd:Cs2O Cold CathodeJournal of Applied Physics, 1970
- The Schottky barrier cold cathodeSolid-State Electronics, 1969
- ELECTRON EMISSION FROM A ``COLD-CATHODE'' GaAs p-n JUNCTIONApplied Physics Letters, 1969
- ELECTRON EMISSION FROM THE SCHOTTKY BARRIER STRUCTURE ZnS:Pt:CsApplied Physics Letters, 1968
- A proposed p-n junction cathodeProceedings of the IEEE, 1966
- Electron Emission from Thin Al-Al2O3-Au StructuresJournal of Applied Physics, 1962
- Tunnel Emission into VacuumJournal of Applied Physics, 1962
- Operation of Tunnel-Emission DevicesJournal of Applied Physics, 1961
- Electron-Emission Microscope and Velocity Distribution Studies on Silicon Carbide p-n Junction EmittersJournal of Applied Physics, 1961