Heteroepitaxy of CuInSe2 on {111}-oriented germanium
- 1 August 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 70 (2), 319-324
- https://doi.org/10.1016/0040-6090(80)90372-7
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Measurement of lattice parameters of AIBIIICVI2 chalcopyrite-type epitaxial layers using reflection high energy electron diffractionThin Solid Films, 1979
- Growth of CuInSe2 films using molecular beam epitaxyJournal of Vacuum Science and Technology, 1979
- Epitaxial layers of CuGaTe2 on GaAsCrystal Research and Technology, 1979
- Growth and electrical properties of epitaxial CuInS2 thin films on GaAs substratesCrystal Research and Technology, 1979
- Epitaxial layers of CuInSe2 on GaAsThin Solid Films, 1978
- Structural and electrical properties of CuGaSe2 thin films on GaAs substratesCrystal Research and Technology, 1978
- Zur Heteroepitaxie von AIBIIIC2VI‐Verbindungen – Interpretation von RHEED‐DiagrammenCrystal Research and Technology, 1978
- Some properties of flash evaporated CuInSe2 thin filmsThin Solid Films, 1974
- Zur relativen Stabilität der Zinkblende‐ und Wurtzit‐Struktur in EpitaxieschichtenCrystal Research and Technology, 1974
- Polaritätsabhängige Struktureffekte in tetraedrisch koordinierten HalbleiternCrystal Research and Technology, 1972