Electron spin resonance study of oxygen donors in silicon crystals

Abstract

Measurements have been conducted on the electron spin resonance due to various types of oxygen donors (thermal, new, and deformation-induced donors) in Czochralski-grown silicon crystals of n type. g tensors determined for these donors all coincide well with that for phosphorus, the anisotropy being very small. Thus, the site symmetry of these oxygen donors is concluded to be very close to Td. From temperature dependence of the absorption, noninteracting paramagnetic spins are shown to reside on new and deformation-induced donors. Contrarily, spins interacting in an antiferromagnetic manner are found to reside on thermal donors.