Multilevel Si doping in GaAs using a single AsCl3:SiCl4 doping source
- 1 February 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2), 1266-1268
- https://doi.org/10.1063/1.330585
Abstract
Multilevel Si‐doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adjustments in the HCl to H2 partial pressure ratios. The H2 is injected between the source and substrate to vary the HCl partial pressure. Si concentrations in these layers vary inversely as approximately the cube of the H2 to HCl partial pressure ratio for a fixed SiCl4 inlet flow.Keywords
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