Schottky barrier at a Mo-GaAs contact

Abstract

Molybdenum layers are deposited on GaAs by MoCl₆ reaction with H₂. During the deposition the GaAs substrates are heated to 400°C. The forward current of prepared Mo-(n)GaAs structure increases over five decades in accordance with the relation J=J₀ exp (qU/кT). The Schottky barrier height is 0.90± 0.02 eV. The reverse current is approximately proportional to the width of the space charge layer at the Mo-GaAs interface. After heat treatments at 100, 200 and 300°C of these Schottky barrier structures their I- V and C- V characteristics are unaltered.