Schottky barrier at a Mo-GaAs contact
- 1 June 1980
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 48 (6), 511-517
- https://doi.org/10.1080/00207218008901133
Abstract
Molybdenum layers are deposited on GaAs by MoCl6 reaction with H2. During the deposition the GaAs substrates are heated to 400°C. The forward current of prepared Mo-(n)GaAs structure increases over five decades in accordance with the relation J=J0 exp (qU/кT). The Schottky barrier height is 0.90± 0.02 eV. The reverse current is approximately proportional to the width of the space charge layer at the Mo-GaAs interface. After heat treatments at 100, 200 and 300°C of these Schottky barrier structures their I- V and C- V characteristics are unaltered.Keywords
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