High performance photovoltaic infrared devices in Hg1−xCdxTe on sapphire
- 1 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1), 64-66
- https://doi.org/10.1063/1.95854
Abstract
A combination of organometallic vapor phase epitaxy and liquid phase expitaxy (LPE) has been used to grow CdTe on sapphire. The resultant heterostructure has been used as a substrate for LPE growth of Hg0.7Cd0.3Te. Photodiodes in the HgCdTe show excellent properties. Typical R0A products are ≥106 Ω cm at 77 K for Hg1−xCdxTe layers with cut-off wavelengths of 4.8–5.2 μm at 77 K. The backside-illuminated spectral response was broadband with quantum efficiencies typically >80% (without antireflection coating).Keywords
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