Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi2Ta2O9)/Semiconductor Field Effect Transistor (MFSFET)

Abstract

The adaptive-learning function was successfully demonstrated in a neuron circuit using a metal/ferroelectric/semiconductor field effect transistor (MFSFET). The polarization direction of the ferroelectric gate film (SrBi₂Ta₂O₉) of MFSFET was gradually reversed by applying a number of input pulses with a sufficiently short duration of 20 ns. Consequently, the S-D (source-drain) resistance of MFSFET was gradually changed, and the output pulse frequency of the neuron circuit was modulated by the number of input pulses.