Electrical Properties of MFS-FETs using SrBi2 Ta2O9 Films Directly Grown on Si Substrates by Sol-Gel Method
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Preparation of SrBi2Ta2O9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi2Ta2O9/CeO2/Si(100) StructuresJapanese Journal of Applied Physics, 1997
- Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structuresIEEE Electron Device Letters, 1997
- A critical comparative review of PZT and SBT - based science and technology for non-volatile ferroelectric memoriesIntegrated Ferroelectrics, 1997
- Performance of srbi2ta2o9for low-voltage, non-volatile memory applicationsIntegrated Ferroelectrics, 1997
- Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) StructuresJapanese Journal of Applied Physics, 1996
- Study on ferroelectric thin films for application to NDRO non-volatile memoriesIntegrated Ferroelectrics, 1995
- Interaction of PbTiO3 Films with Si SubstrateJapanese Journal of Applied Physics, 1994
- Polarization Fatigue Characteristics of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film CapacitorsJapanese Journal of Applied Physics, 1994
- Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory WeightsJapanese Journal of Applied Physics, 1993
- TdI18: Process integration of the ferroelectric memory FETs (FEMFETs) for ndro ferramFerroelectrics, 1992