Thin-film transistors from very low temperature polycrystalline Si on glass substrates
- 31 May 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (5), 391-396
- https://doi.org/10.1016/0038-1101(89)90129-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Characteristics of MOSFETs on large-grain polysilicon filmsIEEE Transactions on Electron Devices, 1988
- Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallizationJournal of Applied Physics, 1987
- High-performance thin-film transistors from optimized polycrystalline silicon filmsApplied Physics Letters, 1987
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985
- Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline SiliconIEEE Transactions on Electron Devices, 1985
- Crystallization temperature of ultrahigh vacuum deposited silicon filmsApplied Physics Letters, 1984
- Thin-film transistors on molecular-beam-deposited polycrystalline siliconJournal of Applied Physics, 1984
- Electrical Properties of Polycrystalline Silicon MOSFETs on GlassJapanese Journal of Applied Physics, 1983
- Low-temperature formation of polycrystalline silicon films by molecular beam depositionJournal of Applied Physics, 1982
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975