Low-temperature formation of polycrystalline silicon films by molecular beam deposition
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2), 995-998
- https://doi.org/10.1063/1.330580
Abstract
Textured polycrystalline-silicon films are obtained by molecular beam deposition under ultrahigh vacuum at temperatures between 400 and 700 °C. Thinner films have a 〈110〉 preferred orientation, whereas a 〈100〉 preferred orientation is dominant in films with a thickness of above 1 μm. The deviation of the textured axes decreases from 20° to 10° with raising substrate temperature from 400 to 700 °C. A depth-dependent preferred orientation inside the film is also observed.Keywords
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