Simultaneous diffusion of oppositely charged impurities in semiconductors
- 1 January 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (1), 59-69
- https://doi.org/10.1016/0038-1101(66)90025-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Studies of anomalous diffusion of impurities in siliconSolid-State Electronics, 1966
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- The diffusion of ionized impurities in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- Diffusion and oxide masking in silicon by the box methodSolid-State Electronics, 1960
- Diffusion of Boron into SiliconJournal of Applied Physics, 1960
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954