Excitonic transitions in lattice-matchedGa1−xInxAsInPquantum wells

Abstract

We present a study of the excitons in quantum wells of ${\mathrm{Ga}}_{1-x}{\mathrm{In}}_x\mathrm{As}$ grown on InP substrates. Well-resolved optical transitions between confined particle states were measured by photoluminescence and photocurrent excitation. Well dimensions were varied from 10 to 200 Å, as ascertained by high-resolution transmission microscopy and x-ray diffraction. The combination of a detailed optical and structural characterization allows for a comparison with theory. Good agreement is obtained with calculations based on the effective-mass approximation which include band nonparabolicity effects and contain no adjustable parameters.