Spectroscopy of excited states inIn0.53Ga0.47As-InP single quantum wells grown by chemical-beam epitaxy

Abstract

Photoluminescence excitation (PLE) spectra are reported for six single quantum wells with thicknesses between 130 and 23 Å grown on the same wafer by chemical-beam epitaxy. The very strong, narrow line emission from these high-quality quantum wells enabled us to perform PLE with a lamp-monochromator combination as the excitation source. All of the observed excitonic absorption peaks are assigned. Good fits to the spectra can be made with band offsets of $Q_e\approx 60\%$ and $Q_h\approx 40\%$ and masses $m_e^{*}=0.041\mathrm{}{m}_0$, $m_{\mathrm{hh}}^{*}=0.465\mathrm{}{m}_0$, and $m_{\mathrm{lh}}^{*}=0.085\mathrm{}{m}_0$. Energy-dependent corrections for $m_e^{*}$ due to conduction-band nonparabolicities are essential for these fits and yield ${\gamma }_e=3.3\mathrm{}\times {10}^{-15\mathrm{}}$ ${\mathrm{cm}}^2$ for the ${\gamma }_e{k}^4$ correction term in the energy dispersion.