The growth of silver on GaAs{001}: Epitaxial relationships, mode of growth and interfacial diffusion
- 2 April 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 90 (1), 113-118
- https://doi.org/10.1016/0040-6090(82)90083-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- On the growth of silver on GaAs{001} surfacesJournal of Crystal Growth, 1982
- Surface defect effects on Schottky barriersJournal of Vacuum Science and Technology, 1981
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- New results in the study of the aluminium epitaxial growth on gallium arsenide (001)Solid State Communications, 1979
- On the growth of Au on clean and contaminated GaAs(001) surfacesJournal of Crystal Growth, 1977
- Molecular beam system controlled by quadrupole mass spectrometerJournal of Physics E: Scientific Instruments, 1977