On the growth of silver on GaAs{001} surfaces
- 31 December 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (1), 25-38
- https://doi.org/10.1016/0022-0248(82)90009-4
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Al-reactions with GaAs (100) surfacesSolid State Communications, 1981
- New results in the study of the aluminium epitaxial growth on gallium arsenide (001)Solid State Communications, 1979
- X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interfaceJournal of Applied Physics, 1979
- Interface chemistry of metal-GaAs Schottky-barrier contactsApplied Physics Letters, 1979
- Molecular beam epitaxy and field emission deposition for metal film growth on III–V compound semiconductors—A comparative studyThin Solid Films, 1979
- The interaction of silver and aluminium on gallium arsenide (001) surfaces: A study by mbe and associated techniquesSurface Science, 1979
- Structural and electrical properties of epitaxial metal films grown on argon ion bombarded and annealed (001)InPJournal of Crystal Growth, 1978
- Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAsJournal of Applied Physics, 1978
- On the growth of Au on clean and contaminated GaAs(001) surfacesJournal of Crystal Growth, 1977
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973