GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System

Abstract

GaAs and GaAlAs equi-rate etchings, which are difficult in the conventional reactive ion etching (RIE), have been achieved by using Cl₂ plasma flux in a new reactive ion beam etching (RIBE) system. The system has an ultra-high-vacuum (UHV) design basis and several plasma monitors for investigating an elementary etching process. The establishment of the equi-rate etching has been presumed as due to the possible elimination of particles contributing to the aluminum-oxide or other non-volatile material formation, such as C, O₂ and H₂O.