Surface vacancies in InP and GaAlAs
- 15 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (8), 690-692
- https://doi.org/10.1063/1.91594
Abstract
We present calculations of the bound‐state energy levels of ideal vacancies near the (110) surface of InP and GaAlAs. We find that there is a strong correlation between the the calculated position of the highest filled anion vacancy level in the neutral vacancy and the measured Fermi level at the surface. This correlation suggests that the recently proposed defect model of Schottky barrier formation is capable of accounting for the observed trends in Schottky barrier formation and that the states responsible in III‐V semiconductors are related to defects which introduce dangling cation bonds.Keywords
This publication has 10 references indexed in Scilit:
- Vacancies near semiconductor surfacesPhysical Review B, 1979
- The Schottky-barrier height of Au on n-Ga1−xAlxAs as a function of AlAs contentApplied Physics Letters, 1979
- (110) surface atomic structures of covalent and ionic semiconductorsPhysical Review B, 1979
- Capacitance-voltage and surface photovoltage measurements of pyrolytically deposited SiO2 on InPThin Solid Films, 1979
- Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiationPhysical Review B, 1978
- Chemical effects in Schottky barrier formationJournal of Physics C: Solid State Physics, 1978
- Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAsPhysical Review B, 1978
- New phenomena in Schottky barrier formation on III–V compoundsJournal of Vacuum Science and Technology, 1978
- The interaction of chlorine with indium phosphide surfacesJournal of Physics C: Solid State Physics, 1978
- Some optical properties of the AlxGa1−xAs alloys systemJournal of Applied Physics, 1976