The interaction of chlorine with indium phosphide surfaces
- 28 May 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (10), 1989-2000
- https://doi.org/10.1088/0022-3719/11/10/009
Abstract
The adsorption and reaction of chlorine with clean cleaved (110) faces of indium phosphide crystals has been investigated by a range of electron spectroscopic techniques. For low exposures the chlorine is relatively weakly bound but for high exposure reaction with the surface leads to corrosion, the removal of some phosphorus from the surface layers, and the creation of a disordered surface. Work functions and electron affinities have been established and the behaviour of Schottky barriers formed at metal-indium phosphide interfaces are discussed in the light of these findings.Keywords
This publication has 15 references indexed in Scilit:
- Photoemission and band-structure studies of the GaAs(110) surfaceJournal of Vacuum Science and Technology, 1977
- Chemisorption-Site Geometry from Polarized Photoemission: Si(111)Cl and Ge(111)ClPhysical Review Letters, 1976
- Angularly resolved photoemission from GaSe using line and synchrotron sourcesJournal of Physics C: Solid State Physics, 1976
- Electronic structure of a metal-semiconductor interfacePhysical Review B, 1976
- Adsorption of oxygen on clean cleaved (110) gallium-arsenide surfacesPhysical Review B, 1974
- Densities of valence states of amorphous and crystalline III-V and II-VI semiconductorsPhysical Review B, 1974
- Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopyPhysical Review B, 1974
- Auger electron spectroscopyContemporary Physics, 1973
- Surface sensitivity and angular dependence of X-ray photoelectron spectraSurface Science, 1973
- Fermi Level Position at Metal-Semiconductor InterfacesPhysical Review B, 1964