Room-temperature InAsSb photovoltaic detectors for mid-infrared applications
- 21 August 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 18 (16), 1756-1758
- https://doi.org/10.1109/lpt.2006.879941
Abstract
Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In0.88Al0.12As0.80Sb0.20 is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In0.88Al0.12As0.80Sb0.20 nearly matches with InAs0.91Sb0.09, leading to more efficient transport of photogenerated holes. The resulting mid-infrared photovoltaic detector exhibits a 50% cutoff wavelength of 4.31 mum and a peak responsivity of 0.84 A/W at room temperature. High Johnson-noise-limited detectivity (D*) of 2.6times109 cmmiddotHz1/2/W at 4.0 mum, and 4.2times1010 cmmiddotHz1/2/W at 3.7 mum are achieved at 300 K and 230 K, respectivelyKeywords
This publication has 14 references indexed in Scilit:
- Fabrication and Characterization of an InAs$_0.96hbox Sb_0.04$Photodetector for MIR ApplicationsIEEE Electron Device Letters, 2004
- Strategy for the design of a non-cryogenic quantum infrared detectorSemiconductor Science and Technology, 2003
- Room temperature InAsSb photovoltaic midinfrared detectorApplied Physics Letters, 2000
- Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1996
- InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxyApplied Physics Letters, 1992
- High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detectorIEEE Electron Device Letters, 1990
- InAs1−xSbx infrared detectorsProgress in Quantum Electronics, 1989
- Liquid-phase-epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodesJournal of Applied Physics, 1987
- High-detectivity InAs0.85Sb0.15/InAs infra-red (1.8-4.8 μm) detectorsElectronics Letters, 1986
- Backside-illuminated InAsSb/GaSb broadband detectorsApplied Physics Letters, 1980