InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
- 29 June 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (26), 3256-3258
- https://doi.org/10.1063/1.106711
Abstract
We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs‐coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current‐voltage, current‐temperature, and capacitance‐voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8 μm of 1.5×1011 cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0×1010 cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.Keywords
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