Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor
- 15 July 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (2), 926-930
- https://doi.org/10.1063/1.341895
Abstract
Changes in properties of molecular‐beam‐epitaxy‐grown GaAs by oxygen‐ion (O+) implantation and annealing, such as crystallinity, carrier concentration, and sheet resistance, are investigated. Using these results, we developed a method of O+ implantation through an external base area to form a small buried collector and to minimize the product, RbCbc, of the base‐collector capacitance Cbc and the base resistance Rb in an AlGaAs/GaAs heterojunction bipolar resistance Rb in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) fabricated by a multiple self‐alignment process with one mask. High‐frequency properties of HBT’s are improved by this method remarkably.Keywords
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